EPROM Datasheet, 16K EPROM Datasheet, buy MF1 NMOS uv EPROM: 8kx8. x 8 ORGANIZATION mW Max ACTIVE POWER, mW Max Details, datasheet, quote on part number: MF1. The NTE is a 16,–bit ( x 8–bit) Erasable and Electrically . After erasure and reprogramming of the EPROM, it is recommended that the quartz.
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No pins should be left open. This exposure discharges the floating gate to its initial state through induced photo current. The table of “Electrical Characteristics” provides rprom for actual device operation.
After the address and data signals are stable the program pin is pulsed from VI L to VIH with a pulse width between 45 ms and 55 ms. An erasure system should be calibrated periodically. Lamps lose intensity as they age. The erasure time is increased by the square of the distance if the distance is doubled the erasure time goes up by a factor of 4.
All similar inputs of the MME may be par- alleled. The transparent lid allows the user to expose the chip to ultraviolet light to erase the bit pattern.
2716 – 2716 16K EPROM Datasheet
Typical conditions are for operation at: Table II shows the 3 programming modes. MMES may be programmed in parallel with the same data in this mode. The programming datashedt is: Extended expo- sure to room level fluorescent lighting will also cause erasure. An opaque coating paint, tape, label, etc. Search the history of over billion web pages on the Internet.
IC Datasheet: 2716 EPROM – 1
The UV content of sunlight may cause a partial erasure of some bits in a relatively short period of time. To prevent damage the device it must not be inserted into a board with power applied. Capacitance Is guaranteed by periodic testing.
This is done 8 bits a byte at a time. The eptom from lamp to unit should be maintained at 1 inch.
Transition times S 20 ns unless noted otherwise. The MME to be erased should be placed 1 inch away from the lamp and no filters should be used. Any individual address, a sequence of addresses, or addresses chosen at random may be programmed. These are shown in Table I.
Any or all of the 8 bits associated with an address location may be programmed wFth a datasheeet program pulse applied to the chip enable pin. All bits will be at a “1” level output high in this initial state and after any full erasure. Multiple pulses are not needed but will not cause device damage.
A new pattern can then be written into the device by following the programming procedure. Program Verify Mode The programming of the MME may be verified either 1 word at a time during the programming as shown in the timing diagram or by reading all of the words out at the end of the programming sequence. Except for “Operating Temperature Range” they are not meant to imply that the devices should be operated at these limits. It is recommended that the MME be kept out of direct sunlight.
When a lamp is changed, the distance is changed, or the lamp is aged, the system should be checked to make certain full erasure erom occurring. The MME is packaged in a pin dual-in-line package with transparent lid. All input voltage levels, including the program pulse on chip-enable are TTL compatible. Direct sunlight any intense light can cause temporary functional fail- ure due to generation of photo current.
Programmers, components, and system designs have been erroneously suspected when incom- plete erasure was the basic problem. Full text of ” IC Datasheet: Program Inhibit Mode The program inhibit mode allows programming several MMES simultaneously with different data for each one by controlling which ones receive the program pulse.